PMV33UPE,215, TO-236AB, Single FETs, MOSFETs
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Параметры
| Категория | Single FETs, MOSFETs |
| ECCN | EAR99 |
| Упаковка | Cut Tape, Reel, Tape & Reel, Tape and Reel |
| Кол-во в упаковке | 3000 |
| Корпус | TO-236AB |
| Вес, г | 0.018 |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.1 nC @ 4.5 V |
| HtsusCode | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 10 V |
| Монтаж | Surface Mount |
| Рабочая температура | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 490mW (Ta) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 3A, 4.5V |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Current - Continuous Drain (Id) @ 25°C #17 | 4.4A (Ta) |
| Drain to Source Voltage (Vdss) #17 | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) #17 | 1.8V, 4.5V |
| FET Type #17 | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs #17 | 22.1 nC @ 4.5 V |
| HtsusCode #17 | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds #17 | 1820 pF @ 10 V |
| Монтаж #17 | Surface Mount |
| Рабочая температура #17 | -55°C ~ 150°C (TJ) |
| Package / Case #17 | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) #17 | 490mW (Ta) |
| Product Status #17 | Active |
| Rds On (Max) @ Id, Vgs #17 | 36mOhm @ 3A, 4.5V |
| Supplier Device Package #17 | TO-236AB |
| Technology #17 | MOSFET (Metal Oxide) |
| Vgs (Max) #17 | ±8V |
| Vgs(th) (Max) @ Id #17 | 950mV @ 250µA |
| Channel Type | P Channel |
| Continuous Drain Current Id | 5.3 A |
| Drain Source On State Resistance | 0.03 ohm |
| Drain Source Voltage Vds | 20 V |
| euEccn | NLR |
| Gate Source Threshold Voltage Max | 700 mV |
| hazardous | false |
| MSL | MSL 1 - Unlimited |
| No. of Pins | 3 Pins |
| Operating Temperature Max | 150 °C |
| Power Dissipation | 980 mW |
| Product Range | - |
| productTraceability | Yes-Date/Lot Code |
| Qualification | - |
| Rds(on) Test Voltage | 4.5 V |
| rohsCompliant | YES |
| rohsPhthalatesCompliant | YES |
| SVHC | No SVHC (21-Jan-2025) |
| tariffCode | 85412900 |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| usEccn | EAR99 |
| BRHTS | 85412910 |
| CAHTS | 8541290000 |
| CNHTS | 8541290000 |
| Continuous Drain Current (Id) | 4.4A |
| Current - Continuous Drain(Id) | 4.4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 36mΩ@4.5V,3A |
| Drain Source Voltage (Vdss) | 20V |
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 22.1nC@4.5V |
| Gate Threshold Voltage (Vgs(th)@Id) | 950mV@250uA |
| INHTS | 85412900 |
| Input Capacitance (Ciss@Vds) | 1.82nF@10V |
| Input Capacitance(Ciss) | 1.82nF@10V |
| Input Capacitance(Ciss@Vds) | 1.82nF@10V |
| MXHTS | 8541.29.99 |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃@(Tj) |
| Рабочая температура #7 | -55℃~+150℃@(Tj) |
| Pd - Power Dissipation | 490mW |
| Power Dissipation (Pd) | 490mW |
| RDS(on) | 36mΩ@4.5V,3A |
| TARIC | 8541290000 |
| Total Gate Charge (Qg@Vgs) | 22.1nC@4.5V |
| Type | P Channel |
| USHTS | 8541290095 |
| CAHTS #1 | 8541210000 |
| Channel Mode | Enhancement |
| CNHTS #1 | 8541210000 |
| Id - Continuous Drain Current | 5.3 A |
| JPHTS | 854121000 |
| KRHTS | 8541299000 |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| MXHTS #1 | 8541210100 |
| Number of Channels | 1 Channel |
| Part # Aliases | 934066842215 |
| Pd - Power Dissipation #1 | 980 mW |
| Product Class Name | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 14.7 nC |
| Rds On - Drain-Source Resistance | 30 mOhms |
| RoHS - Mouser | Y |
| Subcategory | MOSFETs |
| TARIC #1 | 8541210000 |
| Technology #1 | Si |
| Transistor Polarity | P-Channel |
| USHTS #1 | 8541210095 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage | 950 mV |
| Channel Mode #11 | Enhancement |
| Continuous Drain Current | 4.4(A) |
| Drain-Source On-Volt | 20(V) |
| Gate-Source Voltage (Max) | 8(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Рабочая температура #11 | -55C to 150C |
| Operating Temperature Classification | Military |
| Pin Count | 3 |
| Polarity | P |
| Power Dissipation #11 | 0.98(W) |
| Rad Hardened | No |
| Type #11 | Small Signal |