FQPF27P06, TO-220F-3, Single FETs, MOSFETs
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Параметры
| Категория | Single FETs, MOSFETs |
| ECCN | EAR99 |
| Упаковка | Rail/Tube, Tube |
| Кол-во в упаковке | 50 |
| Корпус | TO-220F-3 |
| Вес, г | 3.104 |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| HtsusCode | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Монтаж | Through Hole |
| Рабочая температура | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 47W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 8.5A, 10V |
| Supplier Device Package | TO-220F-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25°C #17 | 17A (Tc) |
| Drain to Source Voltage (Vdss) #17 | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) #17 | 10V |
| FET Type #17 | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs #17 | 43 nC @ 10 V |
| HtsusCode #17 | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds #17 | 1400 pF @ 25 V |
| Монтаж #17 | Through Hole |
| Рабочая температура #17 | -55°C ~ 175°C (TJ) |
| Package / Case #17 | TO-220-3 Full Pack |
| Power Dissipation (Max) #17 | 47W (Tc) |
| Product Status #17 | Active |
| Rds On (Max) @ Id, Vgs #17 | 70mOhm @ 8.5A, 10V |
| Supplier Device Package #17 | TO-220F-3 |
| Technology #17 | MOSFET (Metal Oxide) |
| Vgs (Max) #17 | ±25V |
| Vgs(th) (Max) @ Id #17 | 4V @ 250µA |
| Channel Type | P Channel |
| Continuous Drain Current Id | 17 A |
| Drain Source On State Resistance | 0.055 ohm |
| Drain Source Voltage Vds | 60 V |
| euEccn | NLR |
| Gate Source Threshold Voltage Max | 2 V |
| hazardous | false |
| MSL | - |
| No. of Pins | 3 Pins |
| Operating Temperature Max | 175 °C |
| Power Dissipation | 47 W |
| Product Range | - |
| productTraceability | No |
| Qualification | - |
| Rds(on) Test Voltage | 10 V |
| rohsCompliant | Y-EX |
| rohsPhthalatesCompliant | YES |
| SVHC | No SVHC (23-Jan-2024) |
| tariffCode | 85412900 |
| Transistor Case Style | TO-220F |
| Transistor Mounting | Through Hole |
| usEccn | EAR99 |
| BRHTS | 85412910 |
| CAHTS | 8541290000 |
| CNHTS | 8541290000 |
| Continuous Drain Current (Id) | 17A |
| Current - Continuous Drain(Id) | 17A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 70mΩ@10V,8.5A |
| Drain Source Voltage (Vdss) | 60V |
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 43nC@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| INHTS | 85412900 |
| Input Capacitance (Ciss@Vds) | 1.4nF@25V |
| Input Capacitance(Ciss) | 1.4nF@25V |
| Input Capacitance(Ciss@Vds) | 1.4nF@25V |
| MXHTS | 8541.29.99 |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Рабочая температура #7 | -55℃~+175℃ |
| Pd - Power Dissipation | 47W |
| Power Dissipation (Pd) | 47W |
| RDS(on) | 70mΩ@10V,8.5A |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF@25V |
| TARIC | 8541290000 |
| Total Gate Charge (Qg@Vgs) | 43nC@10V |
| Type | P Channel |
| USHTS | 8541290095 |
| CAHTS #1 | 8541290000 |
| Channel Mode | Enhancement |
| CNHTS #1 | 8541290000 |
| Configuration | Single |
| Fall Time | 90 ns |
| Forward Transconductance - Min | 12 S |
| Высота | 16.07 mm |
| Id - Continuous Drain Current | 17 A |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| Длина | 10.36 mm |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| MXHTS #1 | 85412999 |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation #1 | 47 W |
| Product Class Name | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 33 nC |
| Rds On - Drain-Source Resistance | 70 mOhms |
| Rise Time | 185 ns |
| RoHS - Mouser | E |
| Series | FQPF27P06 |
| Subcategory | MOSFETs |
| TARIC #1 | 8541290000 |
| Technology #1 | Si |
| Tradename | QFET |
| Transistor Polarity | P-Channel |
| Тип | 1 P-Channel |
| Type #1 | MOSFET |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 18 ns |
| USHTS #1 | 8541290095 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 4.9 mm |
| Channel Mode #11 | Enhancement |
| Continuous Drain Current | 17(A) |
| Drain-Source On-Volt | 60(V) |
| Gate-Source Voltage (Max) | ±25(V) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Рабочая температура #11 | -55C to 175C |
| Operating Temperature Classification | Military |
| Pin Count | 3 +Tab |
| Polarity | P |
| Power Dissipation #11 | 47(W) |
| Rad Hardened | No |
| Type #11 | Power MOSFET |