BC847CLT3G, SOT-23-3 (TO-236), Single Bipolar Transistors

onsemi

BC847CLT3G
Загрузка...

Параметры

Категория Single Bipolar Transistors
ECCN EAR99
Упаковка Cut Tape, Reel, Tape & Reel, Tape and Reel
Кол-во в упаковке 10000
Корпус SOT-23-3 (TO-236)
Вес, г 0.017
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Frequency - Transition 100MHz
HtsusCode 8541.21.0075
Монтаж Surface Mount
Рабочая температура -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Мощность 300 mW
Product Status Active
Supplier Device Package SOT-23-3 (TO-236)
Тип NPN
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Current - Collector (Ic) (Max) #17 100 mA
Current - Collector Cutoff (Max) #17 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce #17 420 @ 2mA, 5V
Frequency - Transition #17 100MHz
HtsusCode #17 8541.21.0075
Монтаж #17 Surface Mount
Рабочая температура #17 -55°C ~ 150°C (TJ)
Package / Case #17 TO-236-3, SC-59, SOT-23-3
Мощность #17 300 mW
Product Status #17 Active
Supplier Device Package #17 SOT-23-3 (TO-236)
Тип #17 NPN
Vce Saturation (Max) @ Ib, Ic #17 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) #17 45 V
Collector Emitter Voltage Max 45 V
Continuous Collector Current 100 mA
DC Current Gain hFE Min 520 hFE
euEccn NLR
hazardous false
MSL MSL 1 - Unlimited
No. of Pins 3 Pins
Operating Temperature Max 150 °C
Power Dissipation 225 mW
Product Range -
productTraceability Yes-Date/Lot Code
Qualification -
rohsCompliant YES
rohsPhthalatesCompliant YES
SVHC No SVHC (15-Jan-2018)
tariffCode 85412900
Transistor Case Style SOT-23
Transistor Mounting Surface Mount
Transistor Polarity NPN
Transition Frequency 100 MHz
usEccn EAR99
BRHTS 85412199
CAHTS 8541210000
CNHTS 8541210000
Collector - Emitter Voltage VCEO 45V
Collector Current (Ic) 100mA
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@100mA,5mA
Current - Collector Cutoff 5uA
Current - Collector(Ic) 100mA
DC Current Gain 90@10uA,5.0V
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Emitter-Base Voltage(Vebo) 6V
INHTS 85412100
MXHTS 8541.21.01
Рабочая температура #7 -55℃~+150℃
Pd - Power Dissipation 300mW
Power Dissipation (Pd) 300mW
TARIC 8541210000
Тип #7 NPN
Transition Frequency (fT) 100MHz
Transition frequency(fT) 100MHz
type NPN
USHTS 8541210095
Vce Saturation(VCE(sat)) 600mV
CAHTS #1 8541210000
CNHTS #1 8541210000
Collector- Base Voltage VCBO 50 V
Collector- Emitter Voltage VCEO Max 45 V
Collector-Emitter Saturation Voltage 600 mV
Configuration Single
Continuous Collector Current #1 100 mA
DC Collector/Base Gain hfe Min 420
Emitter- Base Voltage VEBO 6 V
Gain Bandwidth Product fT 100 MHz
Высота 0.94 mm
JPHTS 854121000
KRHTS 8541219000
Длина 2.9 mm
Maximum DC Collector Current 100 mA
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 55 C
Mounting Style SMD/SMT
MXHTS #1 8541210100
Pd - Power Dissipation #1 225 mW
Product Class Name Transistors bipolaires - BJT
Product Type BJTs - Bipolar Transistors
RoHS - Mouser Y
Series BC847CL
Subcategory Transistors
TARIC #1 8541210000
Technology Si
Transistor Polarity #1 NPN
USHTS #1 8541210075
Width 1.3 mm
Category Bipolar Small Signal
Collector Current (DC) 0.1(A)
Collector Current (DC) (Max) 0.1 A
Collector-Base Voltage 50(V)
Collector-Emitter Voltage 45(V)
Configuration #11 Single
DC Current Gain #11 420
DC Current Gain (Min) 420
Emitter-Base Voltage 6(V)
Частота 100(MHz)
Frequency (Max) 100 MHz
Mounting Surface Mount
Number of Elements 1
Рабочая температура #11 -55C to 150C
Operating Temperature Classification Military
Output Power Not Required(W)
Pin Count 3
Power Dissipation #11 0.3(W)
Rad Hardened No
Transistor Polarity #11 NPN

Техническая документация

Купить BC847CLT3G onsemi на стоках